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STP60NF06
N-channel 60V - 0.014 - 60A TO-220 STripFET IITM Power MOSFET
General features
Type STP60NF06

VDSS 60V
RDS(on) <0.016
ID 60A
Exceptional dv/dt capability 100% avalanche tested Application oriented characterization
1 2 3
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
TO-220
Internal schematic diagram
Applications
Switching application
Order code
Part number STP60NF06 Marking P60NF06 Package TO-220 Packaging Tube
March 2007
Rev 6
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Contents
STP60NF06
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP60NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuos) at TC = 25C Drain current (continuos) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 60 20 60 42 240 110 0.74 7.5 - 55 to 175 Max. operating junction temperature Unit V V A A A W W/C V/ns C
PTOT dv/dt (2) Tstg Tj
Peak diode recovery voltage slope Storage temperature
1. Pulse width limited by safe operating area 2. ISD 60A, di/dt 400 A/s, VDD 48V, Tj Tjmax
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 1.36 62.5 300 Unit C/W C/W C
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=30V) Value 30 370 Unit A mJ
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Electrical characteristics
STP60NF06
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 30A 2 0.014 Min. 60 1 10 100 4 0.016 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS = 15V, ID=30A Min. Typ. 50 1660 400 140 VDD = 30V, ID = 60A, VGS = 10V (see Figure 12) 54 9 23 73 Max. Unit S pF pF pF nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30V, ID = 30A RG = 4.7 VGS = 10V (see Figure 11) VDD = 30V, ID = 30A, RG = 4.7, VGS =10V (see Figure 11) Min. Typ. 15 65 45 20 Max. Unit ns ns ns ns
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STP60NF06 Table 7.
Symbol ISD ISDM VSD
(1) (2)
Electrical characteristics Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, VGS = 0 ISD = 60A, VDD=30V di/dt = 100A/s, Tj = 150C (see Figure 13) 70 185 5 Test conditions Min Typ. Max Unit 60 240 1.3 A A V ns nC A
trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STP60NF06
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Source-drain diode forward characteristics
Figure 6.
Static drain-source on resistance
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STP60NF06 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
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Test circuit
STP60NF06
3
Test circuit
Figure 12. Gate charge test circuit
Figure 11. Switching times test circuit for resistive load
Figure 13. Test circuit for inductive load Figure 14. Unclamped Inductive load test switching and diode recovery times circuit
Figure 15. Unclamped inductive waveform
Figure 16. Switching time waveform
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STP60NF06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP60NF06
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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STP60NF06
Revision history
5
Revision history
Table 8.
Date 09-Sep-2004 17-Aug-2006 04-Oct-2006 02-Mar-2007
Revision history
Revision 3 4 5 6 Complete version The document has been reformatted Changes in Dynamic Safe operating area has been updated Changes
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STP60NF06
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